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The design capabilities of MEX1 and MEX2 are shown in the table below. Please consult the user wiki page for current and timelin for the rollout of capabilities.

MEX-1

MEX-2

Beam energy

Monochromatic, 3.4 – 13.6 keV

Monochromatic 2.1 – 3.2 keV

Number of Endstations

2

1

Source

 Bending magnet (BM12-1)

Bending magnet (BM12-1)

Optics

Mirror 1 (M1)

Vertical collimation

  •  Fixed, flat Si substrate

  • Cylindrically bent

  • Bounce up (4.75 mrad)

  • Exchangeable Si, Ni and Rh stripes

Front end mirror (M1)

Vertical collimation

  • Fixed sagittal cylinder

  • Horizontal bounce (15 mrad)

  • Cr stripe

 

Double crystal monochromator

  • Si<111>, dE/E ≈ 1.4 ×10-4

  • Crystal azimuth 0° and 30°

  • Vertical bounce up

Mirror 2 (M2)

Horizontal collimating

  • Fixed cylinder

  • Horizontal bounce (15 mrad)

  • Cr stripe

 

Mirror 2 (M2)

Vertical and horizontal focussing

  • Cylindrical + flat Si substrate

  • Elliptically bent

  • Bounce down (4.75 mrad)

  • Exchangeable B4C and Rh stripes

Double crystal monochromator

  • Si<111>, dE/E ≈ 1.4 ×10-4

  • InSb<111>, dE/E ≈ 3 ×10-4

  • Crystal azimuth 0°

  • Vertical bounce

 Endstations

XAFS Station

  • EXAFS/XANES

  • 3.4 – 13.6 keV

  • Transmission and florescence (4 el. Si SDD)

  • Sample temperature 10 – 300 K (in He(g))

  • HERFD-XAS: > 0.5 m Johann-type crystal analyser

> 5x spherically bent crystals. See here for further information on crystal cuts and accessible emission lines​​​​​​

  • Non-ambient sample environments

  • Beam size 0.15 – 0.5 x 1.8 – 7 mm2

  • Flux 3 x 1011 ph-1 sec-1

“Low energy station”

  • EXAFS/XANES

  • 2.1 – 3.2 keV

  • Transmission, drain current and fluorescence (4 el. Si SDD)

  • HERFD-XAS: >Dispersive refocusing Rowland geometry

>Single cylindrically bent, Si<111> Johann analyser

  • Beam size 0.1 – 3 x 0.1 – 5 mm2

  • Flux: Si<111> 5 x 1010 ph-1 sec-1

InSb<111> 1 x 1011 ph-1 sec-1

  • Sample in He(g) or vacuum

  • Sample temperature 10 – 500K

 

Microprobe station (coming in 2024)

  • µEXAFS/µXANES

  • 2.1 – 13.6 keV

  • 3 el. Si SDD

  • 2-moment KB mirror system

  • Exchangeable Si and Rh stripes

  • Beam size: 3 – >20 µm

  • Flux 108 ph-1 sec-1 µm2

  • Sample in He(g)

  • Sample temperature 80 – 500K

  • Scan range < 80 × 80 mm

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