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The design capabilities of MEX1 and MEX2 are shown in the table below. Please consult the user wiki page for current and timelin for the rollout of capabilities.

MEX-1

MEX-2

Beam energy

Monochromatic, 3.4 – 13.

6

8 keV

Monochromatic

2

1.

1 –

7– 3.2 keV

Number of Endstations

2

1

Source

 Bending magnet (BM12-1)

Bending magnet (BM12-1)

Optics

Mirror 1 (M1)

Vertical collimation

  •  Fixed, flat Si substrate

  • Cylindrically bent

  • Bounce up (4.75 mrad)

  • Exchangeable Si, Ni and Rh stripes

Front end mirror (M1)

Vertical collimation

  • Fixed sagittal cylinder

  • Horizontal bounce (15 mrad)

  • Cr stripe

 

Double crystal monochromator

Si<111>,
  • Two pairs of Si<111>:

    • Crystal azimuth 0° and 30°

  • dE/E ≈ 1.4 ×10-4

Crystal azimuth 0° and 30°
  • Vertical bounce up

Mirror 2 (M2)

Horizontal collimating

  • Fixed cylinder

  • Horizontal bounce (15 mrad)

  • Cr stripe

 

Mirror 2 (M2)

Vertical and horizontal focussing

  • Cylindrical + flat Si substrate

  • Elliptically bent

  • Bounce down (4.75 mrad)

  • Exchangeable B4C and Rh stripes

Double crystal monochromator

  • Si<111>, dE/E ≈ 1.4 ×10-4

  • InSb<111>, dE/E ≈ 3 ×10-4

  • Crystal azimuth 0°

  • Vertical bounce

 Endstations

XAFS Station

  • EXAFS/XANES

  • 3.4 – 13.

6
  • 8 keV

  • Transmission and florescence (4

el.
  • element Si

SDD
  • EDS detector)

  • Sample temperature 10 – 300 K (in He(g))

  • HERFD-XAS: > 0.5 m Johann-type crystal analyser

  • > 5x spherically bent crystals. See here for further information on crystal cuts and accessible emission lines​​​​​​
    • Non-ambient sample environments

    • Beam size

      • 0.15 – 0.5

    x 1.8
      • mm vertical

      • 0.1 – 7 mm

    2
      • horizontal

    • Flux 3 x 1011 ph-1 sec-1

    “Low energy station”

    • EXAFS/XANES

    2
    • 1.

    1
    • 7 – 3.2 keV

    • Transmission, drain current and fluorescence (4 el. Si SDD)

    • HERFD-XAS: >Dispersive refocusing Rowland geometry

    >Single cylindrically bent, Si<111> Johann analyser

    • Beam size 0.1 – 3 x 0.1 – 5 mm2

    • Flux: Si<111> 5 x 1010 ph-1 sec-1

    InSb<111> 1 x 1011 ph-1 sec-1

    • Sample in He(g) or vacuum

    • Sample temperature 10 – 500K

     

    Microprobe station (coming in

    2024

    2025)

    • µEXAFS/µXANES

    • 2.1 – 13.6 keV

    • 3 el. Si SDD

    • 2-moment KB mirror system

    • Exchangeable Si and Rh stripes

    • Beam size: 3 – >20 µm

    • Flux 108 ph-1 sec-1 µm2

    • Sample in He(g)

    • Sample temperature 80 – 500K

    • Scan range < 80 × 80 mm

    Crystal spectrometer